Tunneling Current and Topographical Measurements of Semiconducting Structures Relevant for Electronic Applications using Atomic Force Microscopy

Abstract

This thesis is a combination of a synopsis of techniques used in Atomic Force Microscopy and its subsidiary uses as well as a record of experimental data taken using the instrument for two separate experiments. The first experiment shows the relationship between tunneling current and force applied by the Atomic Force Microscope (AFM) on two dimensional WSe2. This experiment is based on a previous experiment on single layer MoS2. The second experiment shows changes in the layer thickness of Boro-Silicate Glass (BSG) thin films due to different annealing conditions. These experiments focus on the application of I-AFM (the I stands for current) and Non-Contact Atomic Force Microscopy (NC-AFM) in the characterization and exploration of structural and electrical characteristics for use of these materials in electronic applications. The application of the AFM in these experiments, amongst other tasks not included in this thesis, allowed the author to reach a deep understanding of AFM.