Growth and Characterization of Nitrogen Doped Nanocrystalline Diamond Films
Metadata Field | Value | Language |
---|---|---|
dc.contributor.advisor | Tzeng, Yonhua | |
dc.contributor.advisor | Baginski, Thomas A. | en_US |
dc.contributor.advisor | Roppel, Thaddeus | en_US |
dc.contributor.author | Clark, Maurice | en_US |
dc.date.accessioned | 2009-02-23T15:52:21Z | |
dc.date.available | 2009-02-23T15:52:21Z | |
dc.date.issued | 2006-05-15 | en_US |
dc.identifier.uri | http://hdl.handle.net/10415/1313 | |
dc.description.abstract | Nitrogen doped nanocrystalline (NCD) diamond films have been deposited on a variety of substrates using microwave plasma chemical vapor deposition (MWPCVD). These films have been systematically studied to determine their electrical, emission, and surface properties. The resulting NCD films exhibit increased electrical conductivity with increasing nitrogen concentrations. Electron emission test on these films indicate increasing nitrogen content in the plasma leads to higher emission currents and lower turn on electric fields. The surface roughness of nitrogen doped films also gradually decreases with increasing N2 content in the plasma. These films have also been studied to determine the effects of microwave power on their properties. | en_US |
dc.language.iso | en_US | en_US |
dc.rights | EMBARGO_NOT_AUBURN | en_US |
dc.subject | Electrical and Computer Engineering | en_US |
dc.title | Growth and Characterization of Nitrogen Doped Nanocrystalline Diamond Films | en_US |
dc.type | Thesis | en_US |
dc.embargo.length | MONTHS_WITHHELD:36 | en_US |
dc.embargo.status | EMBARGOED | en_US |
dc.embargo.enddate | 2012-02-23 | en_US |