This Is AuburnElectronic Theses and Dissertations

Show simple item record

Growth and Characterization of Nitrogen Doped Nanocrystalline Diamond Films


Metadata FieldValueLanguage
dc.contributor.advisorTzeng, Yonhua
dc.contributor.advisorBaginski, Thomas A.en_US
dc.contributor.advisorRoppel, Thaddeusen_US
dc.contributor.authorClark, Mauriceen_US
dc.date.accessioned2009-02-23T15:52:21Z
dc.date.available2009-02-23T15:52:21Z
dc.date.issued2006-05-15en_US
dc.identifier.urihttp://hdl.handle.net/10415/1313
dc.description.abstractNitrogen doped nanocrystalline (NCD) diamond films have been deposited on a variety of substrates using microwave plasma chemical vapor deposition (MWPCVD). These films have been systematically studied to determine their electrical, emission, and surface properties. The resulting NCD films exhibit increased electrical conductivity with increasing nitrogen concentrations. Electron emission test on these films indicate increasing nitrogen content in the plasma leads to higher emission currents and lower turn on electric fields. The surface roughness of nitrogen doped films also gradually decreases with increasing N2 content in the plasma. These films have also been studied to determine the effects of microwave power on their properties.en_US
dc.language.isoen_USen_US
dc.rightsEMBARGO_NOT_AUBURNen_US
dc.subjectElectrical and Computer Engineeringen_US
dc.titleGrowth and Characterization of Nitrogen Doped Nanocrystalline Diamond Filmsen_US
dc.typeThesisen_US
dc.embargo.lengthMONTHS_WITHHELD:36en_US
dc.embargo.statusEMBARGOEDen_US
dc.embargo.enddate2012-02-23en_US

Files in this item

Show simple item record