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Device Simulation of Density of Interface States of Temperature Dependent Carrier Concentration in 4H-SiC MOSFETs

Shih, Wei-Chung (2014-07-29)

Interface traps play an important role in the SiO2/4H-SiC interface. They are crucial issues for the current and trans-conductance in 4H-SiC MOSFET devices. In this thesis, we present a temperature and bias dependent ...