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Fabrication and characterization of AlGaN/GaN High Electron Mobility Transistor
As primary material for semiconductor fabrication field, Gallium nitride has attracted lots of interest of scientists and developers due to its unique and exceptional electrical properties such as high thermal conductivity, ...
Simulations of the Compact Toroidal Hybrid Using the Finite Element Extended MHD Code NIMROD
Magnetohydrodynamic (MHD) modeling of magnetic confinement devices is an important tool in the understanding of plasma processes. With the nearly axisymmetric tokamak being the leading candidate for a plasma fusion reactor, ...
Novel Interface Trap Passivation and Channel Counter-doping for 4H-SiC MOSFETs
4H-Silicon carbide (4H-SiC) is the most promising wide band gap semiconductor for next generation high power and high temperature metal-oxide-semiconductor field-effect transistors (MOSFETs). However, the channel mobility ...