Now showing items 1-5 of 5
Atomic Data Generation and Collisional Radiative Modeling of Ar II, Ar III, and Ne I for Laboratory and Astrophysical Plasmas
Accurate knowledge of atomic processes plays a key role in modeling the emission in laboratory as well as in astrophysical plasmas. These processes are included in a collisional-radiative model and the results are compared ...
Ohmic Contacts to Implanted (0001) 4H-SiC
The fabrication of low resistance ohmic contacts is a key technology issue for the development of SiC power diodes and transistors. In many cases, contacts are made to implanted regions due to the difficulty of doping SiC ...
Electrical Properties of MOS devices fabricated on 4H Carbon-face SiC
Silicon-based devices are still the mainstay of the electronics industry, with applications ranging from small chips in personal computers to large, high power switching devices. However, Si has faced greater and greater ...
Fabrication and Electrical/Optical Characterization of Bulk GaN-based Schottky Diodes
As a wide bandgap semiconductor material, Gallium Nitride has long been considered as promising in blue and UV Light Emitting Diodes. And recently, its great potential in high power and high temperature applications is ...
Theoretical Study of Pressure-Induced Phase Transitions and Thermal Properties for Main-Group Oxides and Nitrides
Main group nitrides and oxides are important solid compounds with applications in fields ranging from structural ceramics to catalysts and electronic materials. We have theoretically investigated the pressure-induced phase ...