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Optical Spectroscopy of Wide-band-gap Semiconductors: Raman and Photoluminescence of Gallium Nitride, Zinc Oxide and Their Nanostructures
(2008-09-09)
Micro-Raman and photoluminescence (PL) were performed to study GaN and ZnO and their nanostructures. Various ZnO nanostructures were successfully synthesized at low temperatures using thermal chemical vapor deposition ...
Composite Contact Metallization on SiC for High Temperature Applications in Air
(2008-09-09)
Composite ohmic and Schottky contacts fabricated on 4H-SiC for applications in air at 350^oC are described and evaluated in this study. The ohmic contacts were fabricated on p+ implanted and n+ epitaxial materials, while ...
Post Ion-Implantation Surface Palnarization Process for 4H-SiC Wafers Using Carbon Encapsulation Technique
(2008-09-09)
Metal oxide semiconductor (MOS) technology forms the core of the semiconductor power devices. The electronic properties of wide band gap semiconductor materials like 4H-SiC has attracted considerable interest for fabrication ...
Electrical Properties of MOS devices fabricated on 4H Carbon-face SiC
(2009-08-04)
Silicon-based devices are still the mainstay of the electronics industry, with applications ranging from small chips in personal computers to large, high power switching devices. However, Si has faced greater and greater ...
Fabrication and Electrical/Optical Characterization of Bulk GaN-based Schottky Diodes
(2009-08-05)
As a wide bandgap semiconductor material, Gallium Nitride has long been
considered as promising in blue and UV Light Emitting Diodes. And recently, its great
potential in high power and high temperature applications is ...
Theoretical Study of Pressure-Induced Phase Transitions and Thermal Properties for Main-Group Oxides and Nitrides
(2009-08-03)
Main group nitrides and oxides are important solid compounds with applications in fields ranging from structural ceramics to catalysts and electronic materials. We have theoretically investigated the pressure-induced phase ...
Fabrication of AlGaN/GaN MESFET And It’s Applications in Biosensing
(2010-09-29)
Gallium Nitride has been researched extensively for the past three decades for its application
in Light Emitting Diodes (LED’s), power devices and UV photodetectors. With the recent
developments in crystal growth ...
Modification of Flow and Flow Driven Instabilities in the Auburn Linear EXperiment for Instability Studies
(2011-01-04)
The primary focus of the experiments presented here is to study the impact of sheared flows on the stability of a magnetized plasma. Experiments will utilize sheared transverse flows to drive an instability in the ion ...
Spontaneous Electromagnetic Emission from a Strongly Localized Plasma Flow
(2011-04-29)
The laboratory experiments described in this dissertation establish that strongly localized DC electric fields perpendicular to the ambient magnetic field can behave as a radiation source for electromagnetic ion cyclotron ...
Factors Governing Tin Whisker Growth
(2012-08-02)
Tin (Sn) whiskers are electrically conductive, single crystal eruptions that can grow from surfaces where tin is deposited on a substrate surface. They present reliability problems for the electronics industry due to the ...