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Drain Current Noise Spectrum Measurement in 0.18 µm MOSFET Using Integrated SiGe HBT Low-Noise Transimpedance Amplifier




Jingshan, Wang

Type of Degree



Electrical Engineering


We measured drain current noise power spectral density (PSD) in 0.18 µm metal oxide semiconductor field effect transistor (MOSFET) using integrated Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) low-noise transimpedance amplifier (TIA). This measurement system extends the noise-measuring capabilities beyond 2.5 GHz to detect the white noise component beyond the 1/f noise corner frequency. In this work, the corner frequency is approximately 2 GHz, which comes from radio frequency (RF) thermal noise measurement directly instead of the extension line of 1/f noise at low frequencies. PSD of drain current thermal noise is in the range from 1*10^-22 A2/Hz to 5*10^-22 A2/Hz for drain current from 1mA to 12 mA. S-parameters are measured to calculate the gain of device under test (DUT) and TIA system.