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Impact of Correlated RF Noise on SiGe HBT Noise Parameters and LNA Design Implications


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dc.contributor.authorJia, Xiaojia
dc.date.accessioned2013-11-08T19:30:29Z
dc.date.available2013-11-08T19:30:29Z
dc.date.issued2013-11-08
dc.identifier.urihttp://hdl.handle.net/10415/3892
dc.description.abstractThis work presents analytical models of SiGe HBT and LNA noise parameters accounting for high frequency noise correlation. The models are verified using measurement data and circuit simulation. The impact of noise correlation is shown to be a strong function of base resistance rb which acts as both a noise source and an impedance. Correlation and rb as impedance have opposite effects on minimum noise figure NFmin, which explains why a widely used NFmin model that neglects correlation and rb as impedance agreed with measurements. The agreement, however, does not hold for noise matching source resistance Ropt, an important parameter for LNAs. With correlation, noise matching condition is better met for impedance matched LNAs.en_US
dc.rightsEMBARGO_GLOBALen_US
dc.subjectElectrical Engineeringen_US
dc.titleImpact of Correlated RF Noise on SiGe HBT Noise Parameters and LNA Design Implicationsen_US
dc.typethesisen_US
dc.embargo.lengthMONTHS_WITHHELD:60en_US
dc.embargo.statusEMBARGOEDen_US
dc.embargo.enddate2018-11-08en_US

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