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dc.contributor.advisorNiu, Guofuen_US
dc.contributor.authorWang, Jingyien_US
dc.date.accessioned2015-05-07T20:40:28Z
dc.date.available2015-05-07T20:40:28Z
dc.date.issued2015-05-07
dc.identifier.urihttp://hdl.handle.net/10415/4598
dc.description.abstractState of art of 28 nm RF MOSFET is studied using sentaurus process and device tools. DC characteristics, such as C-V, Rs, Rd and I-V curves are calibrated by adjustment of physics model. The relationship between saturation velocity (vsat), energy relaxation time (τ) and high field mobility are studied. What’s more, RF noise simulated with different vsat and τ is presented. The lower these two parameters are, the lower noise parameter we geten_US
dc.subjectElectrical Engineeringen_US
dc.titleInvestigation of RF Noise in 28nm RF CMOS Using TCADen_US
dc.typeMaster's Thesisen_US
dc.embargo.statusNOT_EMBARGOEDen_US


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