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dc.contributor.advisorHamilton, Michaelen_US
dc.contributor.authorGuo, Yaen_US
dc.date.accessioned2015-05-11T13:16:10Z
dc.date.available2015-05-11T13:16:10Z
dc.date.issued2015-05-11
dc.identifier.urihttp://hdl.handle.net/10415/4629
dc.description.abstractThere has been an ever increasing interest in the study of substrate integrated waveguide (SIW) since 1998. Due to its low loss, planar nature, high integration capability and high compactness, SIW has been widely used to develop the components and circuits operating in the microwave and millimeter-wave region. For the integrated design of SIW and other transmission lines, the design of feasible and effective transitions between them is the key. In this work, substrate integrated waveguides for E-band, V-band and Q-band are designed and accurately modeled, their high frequency performances are simulated and analyzed with the Ansys’ High Frequency Structure Simulator (HFSS). Additionally, two kinds of transitions between RWG and SIW are explored for narrow band 76-77 GHz and broad bands 77-81 GHz, 56-68 GHz and 40-50 GHz, and they are simulated in HFSS. The loss of the transition portion is extracted by linear fitting method. Genetic algorithm is also used to find the optimal dimensions and placements of the transitions for broad operative bands. All in all, the purpose of this thesis is to design proper SIW and proper RWG-to-SIW transitions with minimum loss, and the scattering parameters are mainly used to analyze their high frequency performance.en_US
dc.rightsEMBARGO_GLOBALen_US
dc.subjectElectrical Engineeringen_US
dc.titleDesigns of Substrate Integrated Waveguide (SIW) and Its Transition to Rectangular Waveguideen_US
dc.typeMaster's Thesisen_US
dc.embargo.lengthMONTHS_WITHHELD:32en_US
dc.embargo.statusEMBARGOEDen_US
dc.embargo.enddate2017-12-31en_US


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