Wide Temperature Range SiGe HBT Noise Parameters Modeling and LNA Design
| Metadata Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | Niu, Guofu | en_US |
| dc.contributor.author | Ma, Rongchen | en_US |
| dc.date.accessioned | 2015-06-24T15:38:52Z | |
| dc.date.available | 2015-06-24T15:38:52Z | |
| dc.date.issued | 2015-06-24 | |
| dc.identifier.uri | http://hdl.handle.net/10415/4672 | |
| dc.description.abstract | This work investigates SiGe HBT noise parameters and impedance matched Low-Noise Ampli ers(LNAs) intended for operation across a wide temperature range from 93 to 393 K. For the IBM 5AM technology used, noise performance improves with cooling until about 150 K, then degrades some due to carrier freeze-out. With a temperature independent bias current, an LNA designed for 300 K operation shows acceptable performance from 93 to 393 K, albeit with some degradation of linearity below 120 K. | en_US |
| dc.rights | EMBARGO_NOT_AUBURN | en_US |
| dc.subject | Electrical Engineering | en_US |
| dc.title | Wide Temperature Range SiGe HBT Noise Parameters Modeling and LNA Design | en_US |
| dc.type | Master's Thesis | en_US |
| dc.embargo.length | MONTHS_WITHHELD:12 | en_US |
| dc.embargo.status | EMBARGOED | en_US |
| dc.embargo.enddate | 2016-06-23 | en_US |
| dc.contributor.committee | Dai, Fa | en_US |
| dc.contributor.committee | Wilamowski, Bogdan | en_US |