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dc.contributor.advisorNiu, Guofuen_US
dc.contributor.authorMa, Rongchenen_US
dc.date.accessioned2015-06-24T15:38:52Z
dc.date.available2015-06-24T15:38:52Z
dc.date.issued2015-06-24
dc.identifier.urihttp://hdl.handle.net/10415/4672
dc.description.abstractThis work investigates SiGe HBT noise parameters and impedance matched Low-Noise Ampli ers(LNAs) intended for operation across a wide temperature range from 93 to 393 K. For the IBM 5AM technology used, noise performance improves with cooling until about 150 K, then degrades some due to carrier freeze-out. With a temperature independent bias current, an LNA designed for 300 K operation shows acceptable performance from 93 to 393 K, albeit with some degradation of linearity below 120 K.en_US
dc.rightsEMBARGO_NOT_AUBURNen_US
dc.subjectElectrical Engineeringen_US
dc.titleWide Temperature Range SiGe HBT Noise Parameters Modeling and LNA Designen_US
dc.typeMaster's Thesisen_US
dc.embargo.lengthMONTHS_WITHHELD:12en_US
dc.embargo.statusEMBARGOEDen_US
dc.embargo.enddate2016-06-23en_US
dc.contributor.committeeDai, Faen_US
dc.contributor.committeeWilamowski, Bogdanen_US


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