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dc.contributor.advisorNiu, Guofuen_US
dc.contributor.authorWang, Yilien_US
dc.date.accessioned2016-05-02T16:26:25Z
dc.date.available2016-05-02T16:26:25Z
dc.date.issued2016-05-02
dc.identifier.urihttp://hdl.handle.net/10415/5084
dc.description.abstractThis work implements Mextram 504 parameter extraction using ICCAP and ADS simulator. A 50 GHz SiGe HBT is used. Results show a whole procedure of parameter extraction with temperature scaling.en_US
dc.rightsEMBARGO_GLOBALen_US
dc.subjectElectrical Engineeringen_US
dc.titleCircuit Simulator Based Mextram Parameter Extraction of SiGe HBTsen_US
dc.typeMaster's Thesisen_US
dc.embargo.lengthMONTHS_WITHHELD:61en_US
dc.embargo.statusEMBARGOEDen_US
dc.embargo.enddate2021-05-07en_US
dc.contributor.committeeDai, Faen_US
dc.contributor.committeeHamilton, Michaelen_US


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