Browsing by Department "Physics"
Now showing items 61-80 of 101
Microparticle Dynamics in the Presence of Externally Imposed, Ordered Structures in a Magnetized Low-Temperature Plasma
(2019-11-26)
Dusty plasmas are a type of plasma which consists of charged microparticles suspended in a background plasma. In the presence of a strong magnetic field, dusty plasmas have been observed to develop new patterned formations ...
Modeling of Warm Dense Plasmas for the Determination of Transport Properties and Equation of State
(2020-05-14)
We present the results of research studying the properties of dense plasmas using the average atom model. The average atom model is a physically reasonable statistical representation
of an atom in a plasma, and various ...
Modification of Flow and Flow Driven Instabilities in the Auburn Linear EXperiment for Instability Studies
(2011-01-04)
The primary focus of the experiments presented here is to study the impact of sheared flows on the stability of a magnetized plasma. Experiments will utilize sheared transverse flows to drive an instability in the ion ...
New Atomic Data For Iron-Peak Elements For Use In Astrophysical Modeling
(2013-07-25)
Supernovae (SN) and supernova remnant (SNR) plasmas represent some of the most
extreme and unusual objects in the universe. X-ray spectra of supernova remnant plasmas
are key to understanding the mechanism and dynamics ...
Non-axisymmetric equilibrium reconstruction and suppression of density limit disruptions in a current-carrying stellarator
(2018-03-29)
Reconstruction of non-axisymmetric, three-dimensional (3D) plasma equilibria is important for understanding 3D confinement and stability in stellarators as well as in nominally axisymmetric plasmas in tokamaks and ...
Non-perturbative calculations of atomic data for applications in laboratory fusion and astrophysical plasmas
(2012-12-13)
Results are presented for non-perturbative quantal calculations of atomic data for application in laboratory fusion and astrophysical plasmas. One of the key issues in laboratory
fusion plasmas is the accurate modeling ...
Novel Interface Trap Passivation and Channel Counter-doping for 4H-SiC MOSFETs
(2015-05-07)
4H-Silicon carbide (4H-SiC) is the most promising wide band gap semiconductor for next generation high power and high temperature metal-oxide-semiconductor field-effect transistors (MOSFETs). However, the channel mobility ...
Ohmic Contacts to Implanted (0001) 4H-SiC
(2009-11-20)
The fabrication of low resistance ohmic contacts is a key technology issue for the development of SiC power diodes and transistors. In many cases, contacts are made to implanted regions due to the difficulty of doping SiC ...
On the study of atomic and molecular processes affecting Astrophysical Plasma using high-resolution optical and UV spectroscopy
(2019-06-13)
Rydberg Enhanced Recombination (RER), a recombination process related to dielectronic
recombination in which electrons are captured into energy states below the ionization
threshold, has been theoretically predicted to ...
Optical Spectroscopy of Wide-band-gap Semiconductors: Raman and Photoluminescence of Gallium Nitride, Zinc Oxide and Their Nanostructures
(2006-12-15)
Micro-Raman and photoluminescence (PL) were performed to study GaN and ZnO and their nanostructures. Various ZnO nanostructures were successfully synthesized at low temperatures using thermal chemical vapor deposition ...
Particle Charge Determination in a Magnetized Dusty Plasma Flow
(2023-05-04)
Dusty plasmas consist of components typically found in a plasma (electrons, ions
and neutral particles) as well as micrometer sized dust particles. The structural and dynamic
properties of a dusty plasma system are ...
Particle Simulation of Lower Hybrid Waves and Electron-Ion Hybrid Instability
(2014-05-01)
Lower hybrid wave (LHW) has been of great interest to laboratory plasma physics for decades due to its important applications in particles heating and current drive in plasmas devices. There are two fundamental characteristics ...
Phospho-silicate glass as gate dielectric in 4H-SiC metal-oxide-semiconductor devices
(2016-07-28)
Silicon carbide (SiC) based MOS devices are well suited to meet the need for energy efficient power electronics. For 4H-SiC MOSFET technology, one of the crucial challenges is to improve the quality of SiO2/SiC interface, ...
Photodissociation dynamics of vibrationally excited hydrogen molecules examined with reaction microscopy in kinematically complete VUV + NIR experiments
(2023-12-04)
Using the Cold Target Recoil Ion Momentum Spectroscopy (COLTRIMS) technique, we investigated the dissociation of vibrationally excited H₂ and D₂ molecules after two-color vacuum ultraviolet (VUV) + near-infrared (NIR) ...
The Physics of Wind Instruments
(2022-04-14)
Musical instruments have been studied by physicists for centuries due to their complex mechanisms and the presence of many pieces of fundamental physics within. This dis- sertation aims its focus on wind instruments which ...
Post Ion-Implantation Surface Palnarization Process for 4H-SiC Wafers Using Carbon Encapsulation Technique
(2006-12-15)
Metal oxide semiconductor (MOS) technology forms the core of the semiconductor power devices. The electronic properties of wide band gap semiconductor materials like 4H-SiC has attracted considerable interest for fabrication ...
Probing and Controlling Electron Dynamics at the Attosecond Timescale
(2021-03-12)
A recently established attosecond beamline, for studies controlling and probing
electron dynamics, has been stabilized with attosecond precision. The design and
performance of the active stabilization system is presented. ...
Radiation Hardness Study of AlGaN/GaN High Electron Mobility Transistors (HEMTs)
(2019-04-29)
Gallium nitride (GaN) has unique inherent properties such as ionic-covalent bond, large direct bandgap, excellent thermal stability, high threshold displacement energy and higher break-down field. Also, the relatively low ...
The Reliability of Zinc Oxide Based Thin Film Transistors Under Extreme Conditions
(2018-04-23)
In this Ph.D. dissertation, I report the device instability of ZnO thin film transistors (TFTs) under extreme environmental conditions. It is extremely important to identify the cause of device instability under different ...
The role of atomic excited states in laboratory plasmas and a study in fine structure diagnostics for far infra-red astrophysical observations
(2016-12-09)
This dissertation has a focus on the role of atomic excited states in laboratory and astrophysical plasmas. The emphasis is on systems for which perturbation theory is not expected to produce accurate results. The work ...