- AUETD Home
- Browsing by Author
Browsing by Author "Ahyi, Ayayi"
Now showing items 1-6 of 6
- Sort by:
- title
- issue date
- submit date
- Order:
- ascending
- descending
- Results:
- 5
- 10
- 20
- 40
- 60
- 80
- 100
Electronic characterization of technologically relevant interfaces on beta Gallium Oxide and 4H-SiC wide bandgap semiconductors
Jayawardena, Ganegama (2018-04-17)
Conventional silicon power device technologies are rapidly approaching their performance
limits in power devices. Therefore, exploration of novel materials for next-generation power
electronics is necessary. In this ...
Fabrication and Characterization of Thin Film Transistors based on Sol-Gel Derived Zinc Oxide Channel Layers
Mirkhani, Vahid (2018-04-30)
This dissertation aims to explore film and device characteristics of zinc oxide (ZnO) based channel layers fabricated via the sol-gel spin-coating growth technique. ZnO is wide band gap semiconductor with a wide range of ...
Radiation Hard Thin Film Transistors and Logic Circuits Based on ZnO and Related Materials
Wang, Shiqiang (2017-11-30)
Thin film and thin film transistors (TFTs) and logic circuits based on zinc oxide (ZnO) and
related materials, such as zinc tin oxide (ZTO), are designed, fabricated and characterized in
this Ph.D. dissertation. ZnO as ...
Radiation Hardness Study of AlGaN/GaN High Electron Mobility Transistors (HEMTs)
Khanal, Min (2019-04-29)
Gallium nitride (GaN) has unique inherent properties such as ionic-covalent bond, large direct bandgap, excellent thermal stability, high threshold displacement energy and higher break-down field. Also, the relatively low ...
Silicon Carbide/Aluminum Oxide Field-Effect Transistors
Jayawardhena, Isanka Udayani (2020-07-22)
4H-Silicon Carbide is a wide band gap semiconductor with attractive physical properties for high power, high-frequency devices, and electronics that operate under harsh environments that are not accessible to conventional ...
Study of Sb surface doping and borosilicate glass gate dielectric for 4H-SiC MOSFETs
Zheng, Yongju (2017-11-28)
Silicon carbide (SiC) is a compound material with a wide bandgap, high critical electric
field strength, high saturation drift velocity and high thermal conductivity, which makes it an
outstanding material among wide ...