Browsing by Author "Dhar, Sarit"

Now showing items 1-12 of 12

Band Engineering of Perovskite Ferrite Epitaxial Thin Films for OER Catalysis

Paudel, Rajendra (2022-07-28)

Reliable energy from renewable sources via oxidation of water requires an efficient electrocatalyst. The high cost, low abundance, and poor stability of the current noble metal based electrocatalyst are a primary obstacle ...

Characterization of Chromium Trihalide based Magnetic Tunnel Junctions via First Principles Calculations

Heath, Jonathan (2021-04-12)

At finite temperatures, free-standing two-dimensional (2D) materials were originally theorized to be thermodynamically unstable, let alone possess magnetization. However, in 2018, the first ferromagnetic 2D semiconductor ...

Electronic characterization of technologically relevant interfaces on beta Gallium Oxide and 4H-SiC wide bandgap semiconductors

Jayawardena, Ganegama (2018-04-17)

Conventional silicon power device technologies are rapidly approaching their performance limits in power devices. Therefore, exploration of novel materials for next-generation power electronics is necessary. In this ...

Fabrication and Characterization of High Temperature P-channel 4H-SiC MOSFETs

Das, Suman (2022-10-18)

Power devices are of paramount relevance with the emergence of greener technology to utilize renewable energy sources. Conventional Si devices are reaching their performance limit due to Silicon’s physical limitation of ...

Fabrication and Characterization of Thin Film Transistors based on Sol-Gel Derived Zinc Oxide Channel Layers

Mirkhani, Vahid (2018-04-30)

This dissertation aims to explore film and device characteristics of zinc oxide (ZnO) based channel layers fabricated via the sol-gel spin-coating growth technique. ZnO is wide band gap semiconductor with a wide range of ...

Novel Interface Trap Passivation and Channel Counter-doping for 4H-SiC MOSFETs

Modic, Aaron (2015-05-07)

4H-Silicon carbide (4H-SiC) is the most promising wide band gap semiconductor for next generation high power and high temperature metal-oxide-semiconductor field-effect transistors (MOSFETs). However, the channel mobility ...

Phospho-silicate glass as gate dielectric in 4H-SiC metal-oxide-semiconductor devices

Jiao, Chunkun (2016-07-28)

Silicon carbide (SiC) based MOS devices are well suited to meet the need for energy efficient power electronics. For 4H-SiC MOSFET technology, one of the crucial challenges is to improve the quality of SiO2/SiC interface, ...

Radiation Hardness Study of AlGaN/GaN High Electron Mobility Transistors (HEMTs)

Khanal, Min (2019-04-29)

Gallium nitride (GaN) has unique inherent properties such as ionic-covalent bond, large direct bandgap, excellent thermal stability, high threshold displacement energy and higher break-down field. Also, the relatively low ...

The Reliability of Zinc Oxide Based Thin Film Transistors Under Extreme Conditions

Yapa Bandara, Kosala (2018-04-23)

In this Ph.D. dissertation, I report the device instability of ZnO thin film transistors (TFTs) under extreme environmental conditions. It is extremely important to identify the cause of device instability under different ...

Silicon Carbide/Aluminum Oxide Field-Effect Transistors

Jayawardhena, Isanka Udayani (2020-07-22)

4H-Silicon Carbide is a wide band gap semiconductor with attractive physical properties for high power, high-frequency devices, and electronics that operate under harsh environments that are not accessible to conventional ...

Study of Sb surface doping and borosilicate glass gate dielectric for 4H-SiC MOSFETs

Zheng, Yongju (2017-11-28)

Silicon carbide (SiC) is a compound material with a wide bandgap, high critical electric field strength, high saturation drift velocity and high thermal conductivity, which makes it an outstanding material among wide ...

Tunneling Current and Topographical Measurements of Semiconducting Structures Relevant for Electronic Applications using Atomic Force Microscopy

Schoenek, Benjamin (2017-07-27)

This thesis is a combination of a synopsis of techniques used in Atomic Force Microscopy and its subsidiary uses as well as a record of experimental data taken using the instrument for two separate experiments. The first ...