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Characterization and Modeling of 28nm RF MOSFETs and SiGe HBTs
Li, Zhen (2015-12-10)
Both the second and third order intermodulation linearities (IP3 and IP2) are characterized on 28nm RF MOSFETs. The impacts of biasing, device size, frequency, and gate length on IP3 are discussed. With both DC and RF ...