Browsing by Author "Park, Minseo"

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Alternative Growth and Interface Passivation Techniques for SiO2 on 4H-SiC

Zhu, Xingguang (2008-12-15)

Silicon Carbide is a novel wide band gap semiconductor material with excellent thermal, chemical and electrical properties. It also shares its natural oxide SiO2 with Si, which has been widely studied and optimized for ...

Bulk Gallium Nitride Based Electronic Devices: Schottky Diodes, Schottky-Type Ultraviolet Photodetectors and Metal-Oxide-Semiconductor Capacitors

Zhou, Yi (2007-08-15)

Gallium Nitride (GaN) is one of most promising semiconductor materials for high power, high temperature and high frequency applications. Due to the lack of native substrates for homoepitaxial growth, GaN electronic devices ...

Cold Cathodes for Applications in Poor Vacuum and Low Pressure Gas Environments: Carbon Nanotubes Versus Zinc Oxide Nanoneedles

Cheng, An-Jen (2006-05-15)

Effects of gas pressure on the electron field emission (FE) properties of zinc oxide (ZnO) nanoneedles and carbon nanotubes (CNTs) were investigated. The FE properties for ZnO nanoneedles almost fully recovered after being ...

Electrochemical Properties of Two-Dimensional (2D) MXenes and Their Hybrid/Hetero-Structures

VahidMohammadi, Armin (2019-07-11)

Two-dimensional (2D) transition metal carbides and nitrides (MXenes) have gained huge interest over the past few years for electrochemical energy storage applications because of their exceptional physical and (electro)chemical ...

Electronic characterization of technologically relevant interfaces on beta Gallium Oxide and 4H-SiC wide bandgap semiconductors

Jayawardena, Ganegama (2018-04-17)

Conventional silicon power device technologies are rapidly approaching their performance limits in power devices. Therefore, exploration of novel materials for next-generation power electronics is necessary. In this ...

Fabrication and characterization of AlGaN/GaN High Electron Mobility Transistor

Yang, Chungman (2015-05-05)

As primary material for semiconductor fabrication field, Gallium nitride has attracted lots of interest of scientists and developers due to its unique and exceptional electrical properties such as high thermal conductivity, ...

Fabrication and Characterization of Carbon Nanotubes on Ceramic and Silicon Substrates for High Temperature Electronic Device Applications

Yakupoglu, Baha (2018-04-24)

This dissertation focuses on characterization and fabrication of multi-wall carbon nanotubes (CNTs) by DC plasma sputtering and thermal chemical vapor deposition techniques (CVD) on silicon (Si) and ceramic (Al2O3) substrates. ...

Fabrication and characterization of compliant off-chip double helix and carbon nanotube interconnect

Xu, Pingye (2014-12-10)

Microelectromechanical systems (MEMS) type double helix chip-level electrical interconnect structures are fabricated and characterized in this work. Due to their springlike structure, double helix interconnects have the ...

Fabrication and Characterization of Gallium Nitride Based Diodes

Wang, Yaqi (2011-05-06)

This dissertation describes research to the fabrication and characterization of Gallium nitride (GaN) based diodes. GaN is considered to be probably one of the most significant semiconductor material ever discovered ...

Fabrication and Characterization of Thin Film Transistors based on Sol-Gel Derived Zinc Oxide Channel Layers

Mirkhani, Vahid (2018-04-30)

This dissertation aims to explore film and device characteristics of zinc oxide (ZnO) based channel layers fabricated via the sol-gel spin-coating growth technique. ZnO is wide band gap semiconductor with a wide range of ...

Fabrication and Characterization of ZnO and GaN Devices for Electronic and Photonic Applications

Tong, Fei (2013-12-04)

The research work presented in this dissertation is based on two direct and wide band gap semiconductors: ZnO and GaN. On the first part of the dissertation, the synthesis of ZnO nanorod array via the low temperature ...

Fabrication and Electrical/Optical Characterization of Bulk GaN-based Schottky Diodes

Xu, Hui (2009-08-05)

As a wide bandgap semiconductor material, Gallium Nitride has long been considered as promising in blue and UV Light Emitting Diodes. And recently, its great potential in high power and high temperature applications is ...

Gallium nitride based heterojunction field effect transistor: fabrication and application

Thapa, Resham (2012-06-19)

Gallium nitride (GaN) is a wide bandgap semiconducting material, which is piezoelectric, biocompatible, and also resistive to ionizing radiation. Material properties such as direct bandgap, chemical/thermal stability, ...

Investigation of Point Defects in AlGaN/GaN High Electron Mobility Transistor Heterostructures Grown on Si Wafers

Ozden, Burcu (2016-05-18)

This PhD dissertation focuses on the investigation of surface/interface defects in AlGaN/GaN high electron mobility transistors (HEMTs) on Si wafers for power electronic applications. Recently, significant attention has ...

Magnetoelastic Sensor Systems in Biomarker Sensing Applications

MacLachlan, Alana (2023-12-01) ETD File Embargoed

Biosensors are receptor-transducer devices which convert biological responses into readable signals. Biosensor design and development have drawn increasing attention due to the extensive range of possible applications, ...

Non-Enzymatic Paper-based Urea Sensor with Hierarchical NiO Catalysts

Lee, Doohee (2022-11-29) ETD File Embargoed

Urea has attracted attention because of its various potential applications, such as hydrogen production, fuel cells, fertilizers, and electrochemical sensors. Furthermore, as an end-product of human metabolism, urea is ...

Novel Interface Trap Passivation and Channel Counter-doping for 4H-SiC MOSFETs

Modic, Aaron (2015-05-07)

4H-Silicon carbide (4H-SiC) is the most promising wide band gap semiconductor for next generation high power and high temperature metal-oxide-semiconductor field-effect transistors (MOSFETs). However, the channel mobility ...

One Dimensional Zinc Oxide Nanostructures for Optoelectronics Applications: Solar Cells and Photodiodes

Cheng, An-jen (2008-08-15)

Several different morphologies of one-dimensional (1-D) ZnO nanostructured arrays can be controllably synthesized using novel thermal chemical vapor deposition at low temperatures. Well aligned and two dimensional periodic ...

Optical Spectroscopy of Wide-band-gap Semiconductors: Raman and Photoluminescence of Gallium Nitride, Zinc Oxide and Their Nanostructures

Wang, Dake (2006-12-15)

Micro-Raman and photoluminescence (PL) were performed to study GaN and ZnO and their nanostructures. Various ZnO nanostructures were successfully synthesized at low temperatures using thermal chemical vapor deposition ...

Phospho-silicate glass as gate dielectric in 4H-SiC metal-oxide-semiconductor devices

Jiao, Chunkun (2016-07-28)

Silicon carbide (SiC) based MOS devices are well suited to meet the need for energy efficient power electronics. For 4H-SiC MOSFET technology, one of the crucial challenges is to improve the quality of SiO2/SiC interface, ...