- AUETD Home
- Browsing by Author
Browsing by Author "Zhang, Anni"
Now showing items 1-1 of 1
- Sort by:
- title
- issue date
- submit date
- Order:
- ascending
- descending
- Results:
- 5
- 10
- 20
- 40
- 60
- 80
- 100
SiGe HBT Parameter Extraction Using Mextram 505.00
Zhang, Anni (2018-04-24)
Applications of SiGe HBT need a robust model which can accurately describe the performance of SiGe HBT at various temperatures. Circuit simulation requires accurate transistor model and reliable parameters.
This work ...