Drain Current Noise Spectrum Measurement in 0.18 µm MOSFET Using Integrated SiGe HBT Low-Noise Transimpedance Amplifier

Abstract

We measured drain current noise power spectral density (PSD) in 0.18 µm metal oxide semiconductor field effect transistor (MOSFET) using integrated Silicon-Germanium (SiGe) Heterojunction Bipolar Transistor (HBT) low-noise transimpedance amplifier (TIA). This measurement system extends the noise-measuring capabilities beyond 2.5 GHz to detect the white noise component beyond the 1/f noise corner frequency. In this work, the corner frequency is approximately 2 GHz, which comes from radio frequency (RF) thermal noise measurement directly instead of the extension line of 1/f noise at low frequencies. PSD of drain current thermal noise is in the range from 1*10^-22 A2/Hz to 5*10^-22 A2/Hz for drain current from 1mA to 12 mA. S-parameters are measured to calculate the gain of device under test (DUT) and TIA system.