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Investigation of Point Defects in AlGaN/GaN High Electron Mobility Transistor Heterostructures Grown on Si Wafers
Ozden, Burcu (2016-05-18)
This PhD dissertation focuses on the investigation of surface/interface defects in AlGaN/GaN high
electron mobility transistors (HEMTs) on Si wafers for power electronic applications. Recently, significant
attention has ...