Browsing Auburn Theses and Dissertations by Department "Physics"
Now showing items 1-20 of 101
3-D Global Hybrid Simulations of Mode Conversion at the Dayside Magnetopause
(2014-05-02)
Mode conversion at the magnetopause has been suggested to lead to the generation of kinetic Alfven waves (KAWs) and effective mass transport from the solar wind into the magnetosphere. To investigate the mode conversion ...
3D Reconstruction of Plasma Equilibrium using Magnetic Diagnostics on the Compact Toroidal Hybrid
(2011-12-05)
Equilibrium reconstruction of magnetically confined plasma for fusion energy research uses magnetohydrodynamic (MHD) theory in combination with experimental diagnostic data to accurately model high temperature plasma ...
Advanced Analytical Treatment of Shapes and Shifts of Hydrogenic Spectral Lines in Plasmas and its Applications
(2018-04-24)
This work presents a detailed analysis and improvement of various aspects of the theory of the Stark broadening of hydrogen and hydrogen-like ions for a broad range of dense plasma parameters, while looking at both the ...
Advanced SiO2/SiC Interface Passivation
(2012-10-08)
Silicon carbide is a wide band semiconductor with high critical field EC (~ x7 Si) and excellent thermal conductivity (~ x3 Si). These properties make SiC a good candidate for power switching applications. The Baliga figure ...
Alternative Growth and Interface Passivation Techniques for SiO2 on 4H-SiC
(2008-12-15)
Silicon Carbide is a novel wide band gap semiconductor material with excellent thermal, chemical and electrical properties. It also shares its natural oxide SiO2 with Si, which has been widely studied and optimized for ...
Angular Correlation of Electrons Emitted by Double Auger Decay of K-Shell Ionized Neon
(2011-08-02)
We have investigated in detail the $4$-body continuum state produced when core-ionized neon undergoes Double-Auger (\textsc{da}) decay, using COLd Target Recoil Ion Momentum Spectroscopy (\textsc{coltrims}). We conducted ...
Application of Generalized Hamiltonian Dynamics to Modified Coulomb Potential
(2008-12-15)
We apply Dirac’s generalized Hamiltonian dynamics (GHD), a purely classical formalism, to spinless particles under the influence of a binomial potential. The integrals of the motion for this potential were chosen as the ...
Applications of the Classical Two-Coulomb-Center Systems to Atomic/Molecular Physics
(2013-11-01)
We advanced the classical studies of the two-Coulomb-center (TCC) systems consisting of two nuclei of charges Z and Z' and an electron in a circular or a helical state centered on the internuclear axis. These systems ...
Atomic Data Generation and Collisional Radiative Modeling of Ar II, Ar III, and Ne I for Laboratory and Astrophysical Plasmas
(2009-07-16)
Accurate knowledge of atomic processes plays a key role in modeling the emission in laboratory
as well as in astrophysical plasmas. These processes are included in a collisional-radiative
model and the results are compared ...
Band Engineering of Perovskite Ferrite Epitaxial Thin Films for OER Catalysis
(2022-07-28)
Reliable energy from renewable sources via oxidation of water requires an efficient electrocatalyst. The high cost, low abundance, and poor stability of the current noble metal based electrocatalyst are a primary obstacle ...
Bulk Gallium Nitride Based Electronic Devices: Schottky Diodes, Schottky-Type Ultraviolet Photodetectors and Metal-Oxide-Semiconductor Capacitors
(2007-08-15)
Gallium Nitride (GaN) is one of most promising semiconductor materials for high power, high temperature and high frequency applications. Due to the lack of native substrates for homoepitaxial growth, GaN electronic devices ...
Characterization of 4H-SiC/High-κ Dielectric Interfaces via First Principles Calculations
(2022-07-28)
For power electronic devices, wide band gap (WBG) semiconductors are most attractive owing to their excellent physical properties, that they can sustain much higher voltages, frequencies, and temperatures than conventional ...
Characterization of Chromium Trihalide based Magnetic Tunnel Junctions via First Principles Calculations
(2021-04-12)
At finite temperatures, free-standing two-dimensional (2D) materials were originally theorized to be thermodynamically unstable, let alone possess magnetization. However, in 2018, the first ferromagnetic 2D semiconductor ...
Composite Contact Metallization on SiC for High Temperature Applications in Air
(2005-08-15)
Composite ohmic and Schottky contacts fabricated on 4H-SiC for applications in air at 350^oC are described and evaluated in this study. The ohmic contacts were fabricated on p+ implanted and n+ epitaxial materials, while ...
Control of Sawtooth Oscillation Dynamics using Externally Applied Stellarator Transform
(2016-12-09)
The control of sawtooth oscillations is an active area of tokamak research. The sawtooth oscillation is driven by ohmic heating of the core plasma until the safety factor drops below one triggering the growth of an m=n=1 ...
Controlling dust charge in complex plasmas
(2022-07-21)
A dusty plasma is a four-component plasma consisting of electrons, ions, neutral gas, and microparticles (dust) which collect charge from the surrounding plasma environment. They can be found in every regime of plasma ...
Density Limit Disruptions in the Compact Toroidal Hybrid Experiment
(2021-08-03)
Density limit disruptions in toroidal plasma experiments have been an active area of research for decades. Density limit disruptions are plasma terminations that occur as the plasma
density is increased. Plasma disruptions ...
Double Photoionization of Water and Dissociative Electron Attachment to CF4
(2016-11-29)
This thesis is an amalgam of two largely different experiments. While the exper-
imental apparatus are similar, the incident particles, fundamental interactions, and
dissociation dynamics of the two systems are entirely ...
Electrical characteristics of thin-film transistors (TFTs) based on the solution-processed Zinc Tin Oxide (ZTO) channel layer
(2021-12-06)
Transparent amorphous metal oxide-based semiconductors have received significant attention since their inception by Hosono et al. Zinc tin oxide (ZTO), among others, has emerged as a promising candidate for indium-free ...
Electrical Properties of MOS devices fabricated on 4H Carbon-face SiC
(2009-08-04)
Silicon-based devices are still the mainstay of the electronics industry, with applications ranging from small chips in personal computers to large, high power switching devices. However, Si has faced greater and greater ...