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dc.contributor.advisorKirkici, Hulyaen_US
dc.contributor.authorJung, Michaelen_US
dc.date.accessioned2015-08-19T14:06:09Z
dc.date.available2015-08-19T14:06:09Z
dc.date.issued2015-08-19
dc.identifier.urihttp://hdl.handle.net/10415/4851
dc.description.abstractCarbon Nanotubes (CNTs) have been studied for the past two decades and their research continues with new commercial and practical purposes. The structure of carbon and the many shapes it can form makes it an extremely versatile material. The study of very small structures of carbon poses difficulties in accurate description; hence many specialized ways have become standard to measure CNT properties. There are also many different ways of growing CNTs, which can lead to better performance, characteristics and fewer impurities. In this thesis, I study the field emission properties of CNTs and constructed a ―vacuum-tube-diode‖ using CNTs. Different pattern densities, sputtering durations, curing times, and vacuum conditions that are critical in fabrication of CNTs are further examined. In this paper, we will study field emission properties. Randomly aligned Multi Walled Carbon Nanotubes (MWCNTs) are perceived as being the favorite types in industrial fabrication method producing CNTs. This is the facilitator of field emissions in the following device. The Carbon nanotube device is formed in multiple stages. The MWCNTs are grown with a pattern on a silicon wafer. The wafer is cut in smaller sizes and then with a metal perform the small section of the wafer with CNTs on is bonded to a ceramic package. A metal top plate is placed on the ceramic package and a gap is formed between the metal top and the MWCNTs. Then the entire assembly is permanently vacuumed sealed. Once assembled, a biased voltage is applied between the bottom and top metal plates. An electrode collects the emitted electrons from the CNTs tips, through the vacuum. The final assembled device is a small vacuum tube diode.en_US
dc.rightsEMBARGO_NOT_AUBURNen_US
dc.subjectElectrical Engineeringen_US
dc.titleCarbon Nanotube Vacuum Tube Diode RFID Tagen_US
dc.typeMaster's Thesisen_US
dc.embargo.lengthMONTHS_WITHHELD:17en_US
dc.embargo.statusEMBARGOEDen_US
dc.embargo.enddate2016-12-30en_US


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