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Small Signal Equivalent Circuit Extraction and RF Noise Analysis in 28nm High-k/ Metal Gate RF CMOS
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Date
2015-12-10Author
Zhang, Huaiyuan
Type of Degree
Master's ThesisDepartment
Electrical EngineeringRestriction Status
EMBARGOEDRestriction Type
FullDate Available
12-12-2019Metadata
Show full item recordAbstract
This work extracts RF noise in a 28nm high-k/metal gate RF CMOS technology using
a small signal equivalent circuit. All extrinsic and intrinsic small-signal parameters are
extracted from measured data as well as scaling result of each parameters. For noise analysis,
Sid/4kTgd0 is extracted, and its intrinsic value remains less than 2 despite a large increase
from 1 at 90nm gate length, as well as a much stronger increase with VDS. The gate resistance
noise is shown to be a significant noise performance limiter in such technology due to a large
vertical metal interface component that is inversely proportional to gate area, W × L.
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