RF Characterization and Modeling of 14nm RF FinFETs
Metadata Field | Value | Language |
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dc.contributor.advisor | Niu, Guofu | |
dc.contributor.author | Zhang, Jiabi | |
dc.date.accessioned | 2019-12-04T13:54:25Z | |
dc.date.available | 2019-12-04T13:54:25Z | |
dc.date.issued | 2019-12-04 | |
dc.identifier.uri | http://hdl.handle.net/10415/7004 | |
dc.description.abstract | This work focuses on the characterization and compact modeling of RF characteristics of both n- and p-channel transistors fabricated using 14-nm FinFET technologies. DC I-V, as well as its higher order derivatives, C-V, S-parameters and two-tone intermodulation linearity are experimentally measured and modeled using BSIM-CMG compact model. Third order intermodulation distortion is examined using experimental measurements, circuit simulation with BSIM-CMG, and Volterra series analysis. Linearity sweet spots with respect to gate voltage and input power, as well as drain voltage dependence, are examined. A strategy for extracting BSIM-CMG model parameters for fitting intermodulation in addition to DC I-V, C-V and S-parameters is developed and demonstrated. Key BSIM-CMG model parameters are identified for simultaneously fitting DC I-V, C-V, Y-parameters and intermodulation distortion. Volterra series analysis shows that distortions resulting from $V_{DS}$ dependence of $I_{DS}$ well dominate over distortions from $V_{GS}$ dependence of $I_{DS}$. Third order intercept gate voltage ($V_{GS,IP3}$) is extracted from frequency dependence of IIP3. A worst case $V_{GS,IP3}$ of 0.5V is observed, compared to 0.7V in a 28-nm high-k metal gate planar device. Comparison is made between NMOS and PMOS on DC and RF characteristics. Compared to NMOS, PMOS shows larger $I_{DS}$, $g_m$ and $g_{o}$, comparable $f_T$, lower $f_{max}$ at minimum length, better IP3 over a large bias range, and a lower distortion at higher RF power. A larger $V_{GS,IP3}$ is observed in PMOS at higher $V_{GS}$ when $V_{DS}$ is relatively high. | en_US |
dc.rights | EMBARGO_NOT_AUBURN | en_US |
dc.subject | Electrical and Computer Engineering | en_US |
dc.title | RF Characterization and Modeling of 14nm RF FinFETs | en_US |
dc.type | PhD Dissertation | en_US |
dc.embargo.length | MONTHS_WITHHELD:60 | en_US |
dc.embargo.status | EMBARGOED | en_US |
dc.embargo.enddate | 2024-12-03 | en_US |
dc.contributor.committee | Dai, Fa | |
dc.contributor.committee | Masoud, Mahjouri-Samani | |
dc.contributor.committee | Hamilton, Michael | |
dc.creator.orcid | https://orcid.org/0000-0002-0673-4473 | en_US |