RF Linearity Analysis In Nano Scale CMOS Using Harmonic Balance Device Simulations
Type of DegreeThesis
DepartmentElectrical and Computer Engineering
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In this thesis, Intermodulation Linearity characteristics of CMOS have been analyzed using power series and Harmonic Balance(HB) Method. Harmonic Bal- ance method is a frequency domain steady state analysis method used for solving nonlinear circuits. This method is extended to semiconductor device simulation using Taurus-Device tool. Third order Input Intermodulation Product (IIP3), a measure for linearity is characterized as a function of channel length, oxide thick- ness, drain and gate voltages using 130nm, 100nm and 90nm MOS devices. The effect of Polysilicon gate depletion on linearity is studied and analyzed for dif- ferent doping concentrations. Further, the simulated IIP3 values obtained from Harmonic Balance method are compared to the theoretical values calculated using power series.