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dc.contributor.advisorNiu, Guofu
dc.contributor.advisorSingh, Aditen_US
dc.contributor.advisorDai, Fa Fosteren_US
dc.contributor.authorKopalle, Deepikaen_US
dc.date.accessioned2008-09-09T21:17:47Z
dc.date.available2008-09-09T21:17:47Z
dc.date.issued2005-12-15en_US
dc.identifier.urihttp://hdl.handle.net/10415/427
dc.description.abstractIn this thesis, Intermodulation Linearity characteristics of CMOS have been analyzed using power series and Harmonic Balance(HB) Method. Harmonic Bal- ance method is a frequency domain steady state analysis method used for solving nonlinear circuits. This method is extended to semiconductor device simulation using Taurus-Device tool. Third order Input Intermodulation Product (IIP3), a measure for linearity is characterized as a function of channel length, oxide thick- ness, drain and gate voltages using 130nm, 100nm and 90nm MOS devices. The effect of Polysilicon gate depletion on linearity is studied and analyzed for dif- ferent doping concentrations. Further, the simulated IIP3 values obtained from Harmonic Balance method are compared to the theoretical values calculated using power series.en_US
dc.language.isoen_USen_US
dc.subjectElectrical and Computer Engineeringen_US
dc.titleRF Linearity Analysis In Nano Scale CMOS Using Harmonic Balance Device Simulationsen_US
dc.typeThesisen_US
dc.embargo.lengthNO_RESTRICTIONen_US
dc.embargo.statusNOT_EMBARGOEDen_US


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